| PART |
Description |
Maker |
| HYB18T1G400BF07 HYB18T1G160BFV-3.7 HYB18T1G160BFV- |
1-Gbit Double-Data-Rate-Two SDRAM
|
Qimonda AG
|
| HYB18T1G160BF-2.5F HYB18T1G160BF-3S HYB18T1G400BF- |
1-Gbit Double-Data-Rate-Two SDRAM
1-Gbit Double-Data-Rate-Two SDRAM
|
http://
Qimonda AG
|
| GS8170DD36C-333 GS8170DD36C-250 GS8170DD36C-300 GS |
18Mb x2Lp CMOS I/O Double Data Rate SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
18Mb 1x2Lp CMOS I/O Double Data Rate SigmaRAM 35.71x2Lp的CMOS的I / O双数据速率SigmaRAM
|
GSI Technology, Inc.
|
| M13S2561616A-2A |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M14D5121632A-2K |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
| NT5DS4M32EG-5 NT5DS4M32EG-5G NT5DS4M32EG-6 |
1M × 32 Bits × 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NanoAmp Solutions, Inc.
|
| W9412G6JH W9412G6JH-5 |
2M ?4 BANKS ?16 BITS DDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
|
Winbond
|
| MT46V8M16 MT46V32M4 MT46V16M8 |
DOUBLE DATA RATE DDR SDRAM
DOUBLE DATA RATE DDR SDRAM 双倍数据速率的DDR SDRAM内存
|
MICRON[Micron Technology]
Micron Technology, Inc.
|
| K4D263238F K4D263238F-QC40 K4D263238F-QC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL
128Mbit DDR SDRAM
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| HYB18T512800B2FL-3S HYB18T512400B2F-3.7 |
512-Mbit Double-Data-Rate-Two SDRAM 64M X 8 DDR DRAM, 0.45 ns, PBGA60
512-Mbit Double-Data-Rate-Two SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA60
|
Qimonda AG
|
| NT5DS32M8AW-8B NT5DS64M4AT-8B NT5DS32M8AT-75B NT5D |
256Mb Double Data Rate SDRAM
|
ETC[ETC]
|
| MT46V32M16TG-75 MT46V32M16TG-75L MT46V32M16TG-75Z |
DOUBLE DATA RATE DDR SDRAM
|
Micron Technology
|
