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HY5V26CF - (HY5V26CxF) 4 Banks X 2M X 16bits Synchronous DRAM

HY5V26CF_38753.PDF Datasheet


 Full text search : (HY5V26CxF) 4 Banks X 2M X 16bits Synchronous DRAM


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MT46V32M16P-5BJ Double Data Rate (DDR) SDRAM MT46V128M4 ?32 Meg x 4 x 4 banks MT46V64M8 ?16 Meg x 8 x 4 banks MT46V32M16 ?8 Meg x 16 x 4 banks
Micron Technology
T40-16B R40-16B TR40-16B TR40-16B TR40 - 16B
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
T40-16B T40-16B
ETC
W9864G6 W9864G6DB W9864G6DB-7 1M x 4 BANKS x 16 BITS SDRAM
1M x 4 BANKS x 16 BITS SDRAM
From old datasheet system
BGA SDRAM
WINBOND[Winbond]
Winbond Electronics
KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
Samsung Electronic
SAMSUNG[Samsung semiconductor]
HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL 4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
MT48LC16M16LF (MT48xx16M16LF) 4M x 16 x 4 Banks
Micron Technology
RLB-100H RLB-100V RLB-1500H RLB-2000H RLB-2000V RL LOAD BANKS
List of Unclassifed Man...
 
 Related keyword From Full Text Search System
HY5V26CF npn transistor HY5V26CF Type HY5V26CF Type HY5V26CF panasonic HY5V26CF 技术参数
HY5V26CF level converter HY5V26CF Instruments HY5V26CF transceiver HY5V26CF epitaxial HY5V26CF planar
 

 

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