| PART |
Description |
Maker |
| H20R1202 |
Reverse Conducting IGBT
|
Infineon Technologies
|
| IHW40N60R |
Reverse conducting IGBT
|
Infineon Technologies A...
|
| IKW30N65WR5 IKW30N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHW40N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHW20N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHD10N60RA |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW30N100R |
Reverse Conducting IGBT with monolithic body diode
|
INFINEON[Infineon Technologies AG]
|
| IKW40N65WR5-16 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| 5SHX08F4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor 390 A, 4500 V, SCR
|
ABB, Ltd.
The ABB Group
|
| FGR3000FX90DA |
THYRISTOR|REVERSE-CONDUCTING|4.5KV V(DRM)|TO-200VAR120 晶闸管|反向导电| 4.5KV五（DRM）的|00VAR120
|
Mitsubishi Electric, Corp.
|
| IXRH40N120 |
IGBT with Reverse Blocking capability
|
IXYS Corporation
|
