| PART |
Description |
Maker |
| NB7L216MNEVB |
2.5 V / 3.3 V, 12Gb/s Multi Level Clock/Data Input to RSECL, High Gain Receiver/Buffer/Translator with Internal Termination
|
ON Semiconductor
|
| SST39WF1601 SST39WF1601-90-4C-B3QE SST39WF1601-90- |
16 MBIT (X16) MULTI-PURPOSE FLASH PLUS
The SST39WF1601 is a 1M x16 CMOS Multi-Purpose Flash Plus (MPF ) manufactured with SST’s proprietary
|
SST[Silicon Storage Technology, Inc]
Silicon Storage Technology, Inc.
|
| UPD6102G |
Multi Purpose Remote Control Transmitter IC
Consumer IC
From old datasheet system
MULTI-PURPOSE REMOTE CONTROL TRANMITTER IC CMOS LSI
|
NEC[NEC]
|
| CE201210-6N8J CE201210-5N6J CE201210-4N7J CE201210 |
IC,MOT,MC68HC908GR8CP, DIP-28, MCU FLASH 8BIT 8MHZ 4K
IC,MCU,MC68HC908JB8ADW,8-BIT SOIC-28,21 I/O,3MHZ
IC,MCU,MC68HC711E9CFN2,8-BIT 2MHz,PLCC52
8-BIT, OTPROM, 2.1 MHz, MICROCONTROLLER, PDIP20
IC,MCU,MC68HC908KX8CDW,8-BIT SOIC-16,13 I/O,8MHZ
Multi-Layer Chip Inductors 1 ELEMENT, 0.12 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0027 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
IC,MCU,MC68HC705C9ACFN,8-BIT PLCC-44,31 I/O,2MHZ 多层片式电感
Multi-Layer Chip Inductors 1 ELEMENT, 0.39 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns Inc.
Bourns, Inc.
|
| MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor
Toshiba Corporation
|
| TDA8580J |
Multi-purpose power amplifier
|
PHILIPS[Philips Semiconductors]
|
| TDA8580 |
Multi-purpose power amplifier
|
Philips Semiconductors
|
| HL9-100KWTQ HL9-101KWTQ HL9-102KWTQ HL9-1R0KWTQ HL |
1 ELEMENT, 56 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 820 uH, GENERAL PURPOSE INDUCTOR
HIGH CURRENT POWER CHOKES
1 ELEMENT, 100 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 56000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2.7 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 18 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 39 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 27 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3300 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1200 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2200 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1500 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 47 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5.6 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 270 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR
|
RCD COMPONENTS INC.
|
| 2SD2114K 2SD2144S A5800324 2SD2114KW 2SD2144SU 2SD |
High-current Gain MediumPower Transistor (20V/ 0.5A)
High-current Gain MediumPower Transistor (20V, 0.5A)
High-current Gain Medium Power Transistor (20V,0.5A)
From old datasheet system
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| AD8320-EB AD8320 AD8320-15 |
Serial Digital Controlled Variable Gain Line Driver
High Performance, High Output Power Line Driver Featuring 36dB Of Digitally Controlled Variable Gain
|
Analog Devices, Inc.
|
|
