PART |
Description |
Maker |
BAS70-04LT1G BAS70-04LT1 BAS70-04L |
Dual Series Schottky Barrier Diode(70V双肖特基势垒二极 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
|
ONSEMI[ON Semiconductor]
|
BAS40-04LT1-D |
Dual Series Schottky Barrier Diode
|
ON Semiconductor
|
KDR720S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(FOR HIGH SPEED SWITCHING CIRCUIT, FOR SMALL CURRENT RECTIFICATION)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR367E |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR393 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
|
KDR357 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR701S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(FOR HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
CBS05F30 CBS05F30-14 |
Schottky Barrier Diode Silicon Epitaxial Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
FMJ-23L |
10A Schottky barrier diode in TO220F package Schottky Barrier Diode - 30V
|
http:// Sanken Electric Co.,Ltd. SANKEN[Sanken electric]
|
NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
|
ON Semiconductor
|