| PART |
Description |
Maker |
| K8A56ETC |
256Mb C-die NOR FLASH
|
Samsung semiconductor
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4H561638F |
DDR SDRAM 256Mb F-die
|
SAMSUNG
|
| K4H560838J |
256Mb J-die DDR SDRAM Specification
|
Samsung semiconductor
|
| K4H561638H-UI/PB0 K4H561638H-UI/PB3 K4H561638H-UI/ |
256Mb H-die DDR SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4H560838D-TCC4 K4H560838D-TCCC K4H561638D-TCCC K4 |
256Mb D-die DDR400 SDRAM Specification 256Mb芯片支持DDR400内存规格
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4H560838F K4H561638F-UCCC K4H561638F-UCC4 K4H5608 |
256Mb F-die DDR400 SDRAM Specification 256Mb的的F -模具支持DDR400内存规格
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| AM29BL802C_03 AM29BL802C AM29BL802CB80DGE1 AM29BL8 |
Am29BL802C (Known Good Die Supplement)
8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1
|
Advanced Micro Devices
SPANSION[SPANSION]
|
| M381L6423DTM-LCC_C4 M368L1624DTM M368L1624DTM-CCC |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4H560438E-NC/LA2 K4H560838E-NC/LA2 K4H560438E-NC/ |
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP（二
DIODE ZENER SINGLE 300mW 43Vz 5mA-Izt 0.02 0.05uA-Ir 33 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP（二
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP 0 to 70
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC -40 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-SOIC
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S561632E-UC75 K4S561632E-UL75 K4S561632E-UL60 K4 |
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片与内存规格4 TSOP-II免费（符合RoHS
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
