| PART |
Description |
Maker |
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
| X28HC256PI X28HC256DI-15C7871 |
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-PDIP 32K X 8 EEPROM 5V, PDIP28
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-CerDIP 32K X 8 EEPROM 5V, 150 ns, PDSO28
|
Intersil, Corp.
|
| HN58V256AI |
256 k EEPROM (32-kword ×8-bit)(256k EEPROM (32k×8)
|
Hitachi,Ltd.
|
| HN27C256H HN27C256HFP-10T HN27C256HFP-85T HN27C256 |
256K (32K x 8-bit) UV and OTP EPROM, 70ns
256K (32K x 8-bit) UV and OTP EPROM, 85ns
256K (32K X 8-BIT) UV AND OPT EPROM
|
Hitachi Semiconductor
|
| HN58X2464FPI HN58X2408TI HN58X2408FPI HN58X2432TI |
Two-wire serial interface 8k EEPROM (1-kword x 8-bit)/16k EEPROM (2-kword x 8-bit)/32k EEPROM (4-kword x 8-bit)/64k EEPROM(8-kword x 8-bit) 两线串行接口8K的EEPROM中（1 - KWord的8位）/ 16K的EEPROM的（2 - KWord的8位）/ 32K的EEPROM中（4 KWord的8位）/ 64K的EEPROM中（8 KWord的8 -位）
|
Hitachi,Ltd.
|
| HN58X2464TIE HN58X2464FPIE HN58X2464I |
Two-wire serial interface 8k EEPROM (1-kword 】 8-bit)/16k EEPROM (2-kword 】 8-bit) 32k EEPROM (4-kword 】 8-bit)/64k EEPROM (8-kword 】 8-bit)
|
Renesas Electronics Corporation
|
| HN58X2408FPIAGE HN58X2416FPIAGE HN58X2432FPIAGE HN |
Two-wire serial interface 8k EEPROM (1-kword × 8-bit)/16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM (8-kword × 8-bit)
|
Renesas Electronics Corporation
|
| IDT71256 IDT71256L IDT71256L100D IDT71256L100DB ID |
Precision Adjustable (Programmable) Shunt Reference 8-CDIP -55 to 125 的CMOS静态RAM 256K2K的8位）
Dual Pulse-Width-Modulation Control Circuit 16-SSOP 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 25 ns, CDIP28
Single UART with 16-Byte FIFOs and Auto Flow Control 44-PLCC 0 to 70 的CMOS静态RAM 256K2K的8位）
CABLE SMA/SMA 36 RG-142 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 120 ns, CDIP28
Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SSOP -20 to 85 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDSO28
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDIP28
Replaced by TL16C550C : Single UART with 16-Byte FIFO 40-PDIP 0 to 70
Single UART with 16-Byte FIFOs and Auto Flow Control 48-LQFP 0 to 70
1.8-V to 5-V Dual UART with 16-Byte FIFOs 48-TQFP 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFO 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC -40 to 85
Quad Pulse-Width-Modulation Control Circuit 48-LQFP -20 to 75
CMOS Static RAM 256k ( 32k X 8-bit )
|
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Technolog...
|
| 74LVT162245MEAX |
256K, 32K X 8, 2.5V SER EEPROM, -40C to 125C, 8-TSSOP, TUBE 位总线收发
|
Fairchild Semiconductor, Corp.
|
| HN58X2408TIE HN58X2416TIE HN58X2464TIE HN58X2464FP |
Memory>EEPROM>Serial EEPROM
Two-wire serial interface 8k EEPROM (1-kword × 8-bit)/16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM (8-kword × 8-bit)
Two-wire serial interface 8k EEPROM (1-kword 隆驴 8-bit)/16k EEPROM (2-kword 隆驴 8-bit) 32k EEPROM (4-kword 隆驴 8-bit)/64k EEPROM (8-kword 隆驴 8-bit)
|
http://
Renesas Electronics Corporation
|
| HN58X2408FPI HN58X2408I HN58X2408TI HN58X2416FPI H |
Serial EEPROMs
Two-wire serial interface 8k EEPROM (1-kword x 8-bit)/16k EEPROM (2-kword x 8-bit)/32k EEPROM (4-kword x 8-bit)/64k EEPROM(8-kword x 8-bit)
|
HITACHI[Hitachi Semiconductor]
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