| PART |
Description |
Maker |
| K7S3218U4C |
1Mx36 & 2Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
| K7S3236U4C |
1Mx36 & 2Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
| K7R320982C K7R323682C-FC20 K7R323682C-FC25 K7R3236 |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7R320982M K7R321882 K7R321882M K7R323682 K7R32368 |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 1Mx36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7D321874A K7D323674A |
1Mx36 & 2Mx18 SRAM
|
Samsung Electronics
|
| K7D801871B K7D801871B-HC37 K7D801871B-HC35 K7D8018 |
256Kx36 & 512Kx18 SRAM
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7A323630C K7A321830C K7A321830C-PC20 K7A321830C-P |
1M X 36 CACHE SRAM, 3.1 ns, PQFP100
1Mx36 and 2Mx18 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
| K7P321874C K7P323674C K7P323674C-HC300 |
1Mx36 & 2Mx18 SRAM
1M X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119
|
Samsung semiconductor
|
| K7A321830C K7A323630C K7A321830C-PC20 K7A323630C-P |
1Mx36 and 2Mx18 Synchronous SRAM 1Mx36Mx18同步SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7K3236T2C K7K3218T2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7K3236U2C K7K3218U2C-EC330 K7K3218U2C-FC330 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
DDR SRAM, PBGA165 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
|
Samsung semiconductor
Maxim Integrated Products, Inc.
|
