PART |
Description |
Maker |
K7K3236U2C K7K3218U2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
K7K1636U2C K7K1618U2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C- |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM 1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
Z08470 Z08536 |
Customer Procurement Spec(CPS) Z-CIO and CIO Counter/Timer and Parallel I/O Unit
|
Zilog, Inc.
|
19074-0004 19080-0003 19075-0014 19079-0011 19075- |
STAR RING KRIMPTITE (SRA-129-08) 1 mm2, BRASS, RING TERMINAL MULTI-STUD RING INSULKRIMP (B-2006-MSX) 2 mm2, COPPER ALLOY, RING TERMINAL STAR RING INSUL ON TAPE (SRB-229-06XT) 2 mm2, BRASS, RING TERMINAL MULTI-STUD RING (C-1006-MS) 6 mm2, COPPER ALLOY, RING TERMINAL STAR RING INSUL ON TAPE (SRA-229-06XT) 1 mm2, BRASS, RING TERMINAL STAR RING KRIMPTITE (SRA-129-06) 1 mm2, BRASS, RING TERMINAL 190770005 1 mm2, BRASS, RING TERMINAL STAR RING (STEEL) INSUL TAPED (SRA-S-229 1 mm2, STEEL, RING TERMINAL MULTI-STUD KRIMPTITE TAPED (C-1006-MST) STAR RING (STEEL) ON TAPE (SRB-S-129-10T 190740025
|
Molex, Inc. Littelfuse, Inc. MOLEX INC
|
IS61DDB41M36-250M3 IS61DDB42M18-250M3 |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
|
Integrated Silicon Solution, Inc.
|
IS61DDB42M18-250M3 IS61DDB42M18 IS61DDB41M36-250M3 |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
|
Integrated Silicon Solution, Inc
|
K7I643684M-FI30 K7I641884M K7I641884M-CE25 K7I6418 |
72Mb DDRII SRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
R1Q5A3636BBG-60R R1Q5A3618BBG-60R |
36-Mbit DDRII SRAM 4-word Burst
|
Renesas Electronics Corporation http://
|
AS4C32M16D2 |
512M (32M x 16 bit) DDRII Synchronous DRAM
|
Alliance Semiconductor ...
|