| PART |
Description |
Maker |
| NAND01G-M NAND256-M NAND256R3M0 NAND256R3M0AZB5E N |
SPECIALTY MEMORY CIRCUIT, PBGA149
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
|
NUMONYX
STMICROELECTRONICS[STMicroelectronics]
|
| MB84VD22281EA MB84VD22281EA-90-PBS MB84VD22281EE M |
32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM
POT 2.0K OHM 1/4 SQ CERM SL MT
32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA71
|
Fujitsu Component Limited.
Fujitsu Limited
Fujitsu, Ltd.
|
| MB84VD22281EA-90-PBS MB84VD22282EA-90-PBS MB84VD22 |
Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 8M(x8/x16) static RAM
32M (x 8/x16) FLASH MEMORY & 8M (x 8/x16) STATIC RAM
|
Fujitsu Microelectronics
|
| MB84VD22387EJ-90-PBS MB84VD22396EJ-90-PBS MB84VD22 |
32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM 32M的（x16）的闪存16M内存（x16）的SRAM接口的FCRAM
32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM SPECIALTY MEMORY CIRCUIT, PBGA71
ER 9C 9#16 SKT RECP WALL SPECIALTY MEMORY CIRCUIT, PBGA71
|
Spansion Inc.
Spansion, Inc.
|
| K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628 |
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
|
SAMSUNG[Samsung semiconductor]
|
| MB84VD2229XEE MB84VD2229XEA MB84VD2228XEA |
(MB84VD2228xEA/EE / MB84VD2229xEA/EE) 32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM
|
Fujitsu Media Devices
|
| MB84VD22194FM-70PBS MB84VD22184FM-70 MB84VD22184FM |
32M (X16) FLASH MEMORY & 4M (X16) STATIC RAM
|
SPANSION[SPANSION]
|
| MB84VD22194FM-70PBS MB84VD22184FM-70PBS |
32M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM
|
Spansion Inc.
|
| MB84VD22280FA-70PBS |
32M (X16) FLASH MEMORY & 8M (X16) STATIC RAM
|
Spansion Inc.
|
| K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| S70WS512N00BAWA30 S70WS512N000BAWA33 |
32M X 16 FLASH 1.8V PROM, 80 ns, PBGA84
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
|
SPANSION LLC
|
| MT47H32M16CC3B |
512Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
