| PART |
Description |
Maker |
| IRFZ30-005 IRFZ22-012 IRFZ25-012 IRF733-005PBF IRF |
30 A, 50 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
14 A, 50 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
16 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
4.5 A, 350 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
9.2 A, 80 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 80 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
2.6 A, 200 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET
50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
3.3 A, 150 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
5.6 A, 80 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET
30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
13 A, 250 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc.
Molex, Inc.
VISHAY INTERTECHNOLOGY INC
|
| STC08IE150HV C08IE150HV |
Emitter Switched Bipolar Transistor ESBT 1500 V - 8A - 0.10 ohm
|
STMICROELECTRONICS[STMicroelectronics]
|
| RFP40N10 RF1S40N10SM RFG40N10 FN2431 |
CAP 180PF 200V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs
40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
40A 100V 0.040 Ohm N-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| CD6274CA CD6275 CD6302CA 1.5KCD6.8C CD6272CA CD628 |
Low Capacitance, 16 - Channel ±15 V/12 V iCMOS™ Multiplexer; Package: LFCSP (5x5x.85mm) w/2.7exposed pad; No of Pins: 32; Temperature Range: TBD 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Low Capacitance, 16 - Channel ±15 V/12 V iCMOS™ Multiplexer; Package: TSSOP (4.4mm); No of Pins: 28; Temperature Range: TBD 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
0.5 Ω CMOS 1.65 V TO 3.6 V 4-Channel Multiplexer; Package: MSOP; No of Pins: 10; Temperature Range: Automotive 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
CELLULAR DIE PACKAGE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
480 MHz, Single Supply, Triple 2:1, Buffered (G= 2) Multiplexer; Package: EVALUATION BOARDS; No of Pins: -; Temperature Range: Industrial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
16-Channel Multiplexer (Superior DG506A Replacement); Package: PLCC; No of Pins: 28; Temperature Range: Commercial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
5 Ω Max Ron, 4 - /8 - Channel ±15 V /12 V /± 5 V Multiplexers; Package: LFCSP (4x4mm, 2.50mm exposed pad); No of Pins: 16; Temperature Range: Industrial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
CMOS Low Voltage, 3 O 4-Channel Multiplexer; Package: TSSOP; No of Pins: 16; Temperature Range: Industrial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
0.28 O CMOS 1.65 V to 3.6 V Single SPST Switches in SC70 Open for a Logic 1 Input; Package: SC70; No of Pins: 6; Temperature Range: Industrial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Low Capacitance, 8-Channel, ±15 V/ 12 V iCMOS® Multiplexer; Package: TSSOP; No of Pins: 16; Temperature Range: Commercial 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Low Capacitance, 8-Channel, ±15 V/ 12 V iCMOS® Multiplexer; Package: LFCSP (4x4x.85mm, 2.10mm exposed pad); No of Pins: 16; Temperature Range: TBD 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Low Capacitance, 4-Channel, ±15 V/ 12 V iCMOS™ Multiplexer; Package: TSSOP; No of Pins: 16; Temperature Range: TBD 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
4 Channel Buffered, 250 MHz, 10 ns Switching Multiplexer w/Amplifier; Package: SOIC; No of Pins: 14; Temperature Range: Industrial
|
Microsemi, Corp.
MICROSEMI CORP-SCOTTSDALE
|
| 2SK3218-01 |
CABLE ASSEMBLY; LEAD-FREE SOLDER; BNC MALE TO SMA MALE; 50 OHM, RG196A/U COAX; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 40 A, 150 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL SILICON POWER MOS-FET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| STFV3N150 STFW3N150 STP3N150 STW3N150 |
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH Power MOSFET
N-channel 1500 V, 6 楼?, 2.5 A, PowerMESH垄芒 Power MOSFET
|
STMicroelectronics
|
| CY7C1362B-166AI CY7C1362B-166AC CY7C1360B-200BGC C |
CONNECTOR ACCESSORY 256K X 36 CACHE SRAM, 3.5 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PQFP100
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (S)
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (L)- (2)
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| STS7C4F30L |
7 A, 30 V, 0.026 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
N-CHANNEL 30V - 0.018 ohm - 7A SO-8 P-CHANNEL 30V - 0.070 ohm - 4A SO-8 STripFET⑩ POWER MOSFET
P-CHANEL 30V - 0.027 OHM - 6A SO-8 STRIPFET II POWER MOSFET
N-CHANNEL 30V - 0.018 ohm - 7A SO-8 P-CHANNEL 30V - 0.070 ohm - 4A SO-8 STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRF710 FN2310 |
2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N娌??澧?己?????OS?烘?搴??)
From old datasheet system
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
HARRIS SEMICONDUCTOR
Intersil Corporation
|
| HUF75639S3R4851 HUF75639S3NL |
Global Limit Switches Series GLS: Wobble - Coil Spring, 2NC 2NO DPDT Snap Action, 20 mm
56A 115V 0.025 Ohm N-Channel UltraFET Power MOSFET
56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
56A/ 115V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| HUF76633S3S HUF76633P3 HUF76633S3ST HUF76633S3STNL |
38A,100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 39A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 39A条（丁）|63AB
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Intersil, Corp.
|
| HUF76439P3 HUF76439S3S HUF76439S3ST |
71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 75 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Dual Differential Drivers and Receivers With /-15-kV IEC ESD Protection 16-TSSOP -40 to 85 75 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
71A, 60V, 0.014Ohm, N-Channel, Logic Lvl UltraFET Power MOSFET
71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
|
Fairchild Semiconductor, Corp.
Intersil, Corp.
|
|
