| PART |
Description |
Maker |
| 2-1437021-2 4-1437021-7 0-1437021-2 7-1437021-1 2- |
BUCHSENLEISTE IDC OHNE MITTELPOL 34 POL
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit
BUCHSENLEISTE IDC OHNE MITTELPOL 26 POL
BUCHSENLEISTE IDC OHNE MITTELPOL 50 POL
BUCHSENLEISTE IDC OHNE MITTELPOL 10 POL BUCHSENLEISTE IDC的OHNE MITTELPOL 10波兰
|
Linear Technology, Corp.
|
| 91716-7001 91716-0530 91716-3008 91716-1515 91716- |
2.5 APPLI-M 17CKT OP/EW WO/POL 17 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
2.5 Appli-M 4Ckt Op/Ew WO/Pol 4 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
2.5 APPLI-M 9CKT OP/EW WO/POL VD2 5 8GRN 9 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
2.5 APPLI-M 6CKT OP/EW W/POL 2&3 6 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
RAST 2.5 APPLI-M 3CKT OP/EW WO/POL 3 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
2.5 Appli-M 6Ckt Op/Ew WO/Pol 6 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
2.5 APPLI-M 5CKT OP/EW WO/POL 5 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
2.5 APPLI-M 19CKT OP/EW WO/POL 19 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
2.5 Appli-M 5Ckt Op/Ew W/Pol 3/4
|
Bourns, Inc.
Molex, Inc.
MOLEX INC
|
| EPC1064 EPC1064V EPC1441 EPC1213 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM050F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| EPC4 EPC8 |
Configuration Devices for SRAM-Based LUT Devices
|
Altera Corporation
|
| TRF600-150-2 TRF600-160 TRF600-160-2 TRF600-160-R1 |
PolySwitch Resettable Devices Telecommunications & Networking Devices
|
Tyco Electronics
|
| MINISMDC110 |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| TRF600-150-B-0.5 TRF600-150-B-0.5-2 |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| MICROSMD010F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| SMD250 |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
|
