| PART |
Description |
Maker |
| RT6N430C |
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| RT2N63M |
Composite Transistor For Muting Application Silicon NPN Epitaxial Type
|
Isahaya Electronics Corporation
|
| 2SA1954 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
| 2SA1953 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
| 2SC5233 E007768 |
NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)
GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION
From old datasheet system
|
Toshiba Semiconductor
|
| KTC2875 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(FOR MUTING AND SWITCHING)
|
KEC(Korea Electronics)
|
| 2SC421307 2SC4213 |
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
Toshiba Semiconductor
|
| 2N3906 |
PNP Silicon Transistor (General small signal application Switching application)
|
AUK corp
|
| BC848U |
NPN Silicon Transistor (General purpose application Switching application)
|
AUK[AUK corp]
|
| BC857UF |
PNP Silicon Transistor (General purpose application Switching application)
|
AUK[AUK corp]
|
| BC858F |
PNP Silicon Transistor (General purpose application Switching application)
|
AUK[AUK corp]
|
