PART |
Description |
Maker |
ATMEGA128A1 |
Write/Erase cycles: 10,000 Flash/100,000 EEPROM
|
ATMEL Corporation
|
CY14B101Q2-LHXI |
1 Mbit (128 K x 8) Serial SPI nvSRAM Infinite read, write, and RECALL cycles
|
Cypress Semiconductor
|
CY14B256PA-SFXIT |
32K X 8 NON-VOLATILE SRAM, PDSO16 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16 256-Kbit (32 K x 8) SPI nvSRAM with Real Time Clock Infinite read, write, and RECALL cycles
|
Cypress Semiconductor, Corp.
|
MTS-18B |
15 Million cycles MTS-18B Transfer Switch DC to 18 GHz 15 Million cycles MTS-18B Transfer Switch DC to 18 GHz From old datasheet system
|
MINI[Mini-Circuits]
|
MCM69R819AZP8R MCM69R819AZP5 MCM69R819AZP6 MCM69R8 |
MCM69R737A/D 4M Late Write LVTTL ER 14C 12#16 2#4 SKT PLUG 256K X 18 LATE-WRITE SRAM, 2.5 ns, PBGA119 4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3 ns, PBGA119 4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3.5 ns, PBGA119
|
Motorola, Inc Motorola Mobility Holdings, Inc.
|
XR-117-2CP XR-117-2CN XR-117-4CN XR-117-4CP XR1099 |
2-Channel Disk Read/Write Circuit 7Channel Graphic Equalizer Filter with A/D Converter and Improved mP Interface(105.88 k ) 6-Channel Read/Write Circuit 6通道写电 2通道磁盘写电 4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电 Graphic Equalizer 图形均衡
|
Brady, Corp.
|
AM29F400AB AM29F400AB-120EC AM29F400AB-120ECB AM29 |
4 Megabit (524288 x 8-Bit/262144 x 16-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
|
AMD[Advanced Micro Devices]
|
PV2S640SS |
ELECTRIC LIFE: 200,000 MAKE-AND-BREAK CYCLES
|
E-SWITCH
|
AT49LV4096A AT49BV4096A AT49LV4096A-70C5I |
256K X 16 FLASH 2.7V PROM, 70 ns, PBGA48 4M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot 4M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot
|
ATMEL CORP
|
BG650.2505201 BG650.5005201 BG650.7505201 BG650 |
EC-motor with planetary gear unit for automatic spindle positioning cycles
|
Baumer IVO GmbH & Co. KG
|
AM29F400AB-65EC AM29F400AB-65EI AM29F400AB-65FC AM |
Dual Retriggerable Monostable Multivibrators 16-SO -40 to 85 512K X 8 FLASH 5V PROM, 60 ns, PDSO48 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PDSO48 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 4兆位24,288 x 8-Bit/26244 x 16位).0伏的CMOS只,扇区擦除闪存 4 Megabit (524/288 x 8-Bit/262/144 x 16-Bit) CMOS 5.0 Volt-only/ Sector Erase Flash Memory Dual Retriggerable Monostable Multivibrators 16-TVSOP -40 to 85 Dual Retriggerable Monostable Multivibrators 16-SOIC -40 to 85 4 Megabit (524,288x8-bit/262, 144x16 bit) CMOS 5.0Volt-only, sector erase flash memory
|
AMD Advanced Micro Devices, Inc.
|