PART |
Description |
Maker |
3DD5606 |
CASE-RATED BIPOLAR TRANSISTOR
|
JILIN SINO-MICROELECTRONICS
|
3DD5036-O-A-N-D 3DD5036 |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD5606-O-Z-N-C |
CASE-RATED BIPOLAR TRANSISTOR 3DD5606 FOR LOW FREQUENCY AMPLIFICATION
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
IRG4PH20KPBF IRG4PH20KPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
HDMP-1014 HDMP-1012 |
Bipolar Transistor; Collector Emitter Voltage, Vceo:400V; Transistor Polarity:N Channel; Power Dissipation:250W; C-E Breakdown Voltage:400V; DC Current Gain Min (hfe):10; Collector Current:50A; Package/Case:TO-3 Phase Lock Loop (PLL) IC; Number of Circuits:1; Package/Case:14-DIP; Mounting Type:Through Hole 4Low成本千兆速率发接收芯片
|
Agilent(Hewlett-Packard)
|
IRG4PH30KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Ultrafast IGBT 绝缘栅双极晶体管短路额定IGBT的超
|
International Rectifier, Corp.
|
BUZ77B C67078-S1320-A5 BUZ77BC67078-S1320-A5 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS功率晶体管(N通道增强模式雪崩级) DMOS driver for bipolar stepper motor SIPMOS ? Power Transistor From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
IRG4BC30KDPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast 1GBT
|
International Rectifier
|
TC74HC123AF TC74HC123AFN TC74HC123AP HC123 |
Bipolar Transistor; Package/Case:TO-126; Current Rating:500mA; Voltage Rating:300V DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor] http://
|
BUZ111SL Q67040-S4003-A2 BUZ111 |
From old datasheet system SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
|
SIEMENS[Siemens Semiconductor Group]
|
BUZ102 C67078-S1351-A2 BUZ102E3045A BUZ102E3249 |
N-Channel SIPMOS Power Transistor From old datasheet system SIPMOS ? Power Transistor SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) 42 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 42 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) SIPMOS功率晶体管(N通道增强模式雪崩额定dv / dt的评价)
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG Infineon Technologies AG
|