| PART |
Description |
Maker |
| IXGM25N100A IXGP12N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE
IGBT 20 A, 1000 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| 2SJ278MYTR-E 2SJ278 2SJ278MYTL-E |
1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
| IRFG110 2N7334 2N7334-QR-EB |
1000 mA, 100 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
14 LEAD DUAL IN LINE QUAD
|
SEMELAB LTD
Seme LAB
|
| SML100B13 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13 A, 1000 V, 0.86 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
TT electronics Semelab, Ltd.
|
| DMG1012UW-7 |
1000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET GREEN, PLASTIC PACKAGE-3
N-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes, Inc.
Diodes Incorporated
|
| 2SK3337-01 |
N-CHANNEL SILICON POWER MOS-FET 7 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
FUJI ELECTRIC CO LTD
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| BSM191/F |
28 A, 1000 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INFINEON TECHNOLOGIES AG
|
| STP3N100XI |
1.6 A, 1000 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ST Microelectronics
|
| APT10021JFLL_04 APT10021JFLL APT10021JFLL04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| S558-5999-Q2 |
Xfmr Module 1000 Mbps DATACOM TRANSFORMER FOR 10/100/1000 BASE-T; ETHERNET APPLICATION(S)
|
Bel Fuse, Inc.
|
| HER507 HER504 HER505 HER508 HER502 HER503 HER501 H |
5.0 Amp High Efficient Rectiffiers 50 to 1000 Volts 5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
|
Micro Commercial Components, Corp.
MCC[Micro Commercial Components]
|
|
