| PART |
Description |
Maker |
| TIM5964-25UL TIM5964-25UL09 |
HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| TIM3742-16UL |
HIGH POWER P1dB=42.5dBm at 3.7GHz to 4.2GHz
|
Toshiba Semiconductor
|
| TIM6472-4UL09 |
HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| TIM6472-12UL09 |
HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| TIM4450-16UL09 |
HIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| AWT6235RM20P8 |
WiBro 3.4V/25.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc
|
| AWT6275 |
HELP IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module 帮助膜厚 WCDMA.4V/27.5dBm线性功率放大器模块
|
ANADIGICS, Inc.
|
| TIM5964-16SL-422 |
IM3=-45 dBc at Pout= 31.5dBm G1dB=8.0dB(min) at 5.85GHz to 6.75GHz
|
Toshiba Semiconductor
|
| MCO500-18IO1 MCO500 MCO500-12IO1 MCO500-14IO1 MCO5 |
1800V high power thyristor module
1600V high power thyristor module
1400V high power thyristor module
1200V high power thyristor module
High Power Thyristor Modules
|
IXYS[IXYS Corporation]
|
| SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd.
Seme LAB
|
