PART |
Description |
Maker |
MRFG35010MT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35003N6AT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35030R5 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35010 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35002N6T108 MRFG35002N6T1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor... Freescale Semiconductor, Inc
|
DSEP30-06A DGS19-025AS DGSK40-025A DGSK40-025AS DG |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB HiPerFRED Epitaxial Diode with soft recovery
|
IXYS, Corp. IXYS[IXYS Corporation]
|
WP7113ID5V13 |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
GN01032N |
Gallium Arsenide Devices
|
Panasonic
|
GN01021 |
Gallium Arsenide Devices
|
Panasonic
|