| PART |
Description |
Maker |
| MAAM-007219-000000 MAAM-007219 MAAM-007219-TR3000 |
3.6 V, 450 mW DECT RF Power Amplifier IC 1880 - 1900 MHz
|
MACOM[Tyco Electronics]
|
| Q68000-A8882 CGY180 |
Power Amplifier (DECT, PCS)
From old datasheet system
GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| ITT2205AF |
3.6V 0.5W RF Power Amplifier IC for DECT
|
M/A-COM / Tyco Electronics
|
| CGY2032TSC1 |
DECT 500 mW power amplifier
|
Philips
|
| CGY2032TS |
DECT 500 mW power amplifier
|
NXP Semiconductors
Philips Semiconductors
|
| CGY2032BTS CGY2032BTS_2 |
DECT 500 mW power amplifier
From old datasheet system
|
Philips
|
| P1935 |
Power Amplifier 1880-1920 MHz 35 dB min. Gain @ 1900MHz
|
PDI[PREMIER DEVICES, INC.]
|
| CPA-118-PAA CPA-111-PBA CPA-114-PBA CPA-110-PBM |
1750 MHz - 3000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NEC, Corp.
M/A-COM Technology Solutions, Inc.
|
| PXAC182908FV-V1 |
High Power RF LDMOS FET 240W, 28V, 1805 - 1880 MHz
|
Wolfspeed
|
| PXAC182002FC-V1 |
High Power RF LDMOS FET 180W, 28V, 1805 - 1880 MHz
|
Wolfspeed
|
| PTFA181001GL09 |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805-1880 MHz
|
Infineon Technologies AG
|
