PART |
Description |
Maker |
BAT54 BAT54C BAT54S BAT54A BAT54_SERIES_4 BAT54SER |
DIODE KLEINSIGNAL SMD SCHOTTKY 贴片肖特基二极管KLEINSIGNAL 2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer Schottky barrier (double) diodes From old datasheet system DISCRETE SEMICONDUCTORS SCHOTTKY BARRIER DOUBLE DIODES
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Won-Top Electronics Co., Ltd. PHILIPS[Philips Semiconductors] NXP Semiconductors
|
MA2J728 MA728 |
Schottky Barrier Diodes (SBD) Silicon Epitaxial Planar Type Schottky Barrier Diodes From old datasheet system
|
Matsshita / Panasonic Mitsubishi
|
BAT721 1PS76SB21 1PS76SB21-15-15 BAT721C BAT721S B |
Planar Schottky barrier diodes with an integrated guard ring for stress protection. Encapsulated in small Surface-Mounted Device (SMD) plastic packages. Schottky barrier diodes in small packages
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NXP Semiconductors
|
MA3S795E MA3S795D MA795WK MA795WA |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD)
|
PANASONIC[Panasonic Semiconductor] Matsshita / Panasonic
|
MA3S781E MA3S781D |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
MA745 MA3J745 MA3J745MA745 |
Schottky Barrier Diodes (SBD) Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
|
PANASONIC[Panasonic Semiconductor]
|
BAT15-014 BAT15-044 BAT15-074 BAT15-104 BAT15-124 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) 硅肖特基二极管(低搅拌机应用障碍密封二极管频率高0 GHz的陶瓷封装) RES, 18 OHM 1% 1/8W SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
HSB226WK |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE
|
HITACHI[Hitachi Semiconductor]
|
BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors PHILIPS[Philips Semiconductors]
|
BAT754 BAT754A BAT754C BAT754S BAT754_SERIES_1 BAT |
From old datasheet system Schottky barrier double diodes Schottky barrier (double) diodes
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BAT54A BAT54TA BAT54S BAT54SRS-15 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODES 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
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Diotec Semiconductor AG Diodes Incorporated
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