| PART |
Description |
Maker |
| ND24106L BSS129 ND2406L ND2410L 70198 |
N-Channel Depletion-Mode MOSFET Transistor(??ぇ婕??瀵奸??甸?0惟锛?す???娴?.15A??娌????敖??OSFET?朵?绠?
N-Channel Depletion-Mode MOSFET Transistor(最大漏源导通电0Ω，夹断电.15A的N沟道耗尽型MOSFET晶体 N沟道耗尽型MOSFET晶体管（最大漏源导通电0Ω，夹断电.15A的N沟道耗尽型MOSFET的晶体管
From old datasheet system
N-Channel Depletion-Mode MOSFET Transistors
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
| IXTT16N10D2 |
Depletion Mode MOSFET
|
IXYS
|
| IXTA08N100D2 IXTP08N100D2 IXTY08N100D2 |
21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA
Depletion Mode MOSFET
|
IXYS Corporation
|
| LND250K1 LND250 |
N-Channel Depletion-Mode MOSFET
|
Supertex Inc
SUTEX[Supertex, Inc]
|
| LS1608-100-RM LS1608-331-RM LS1608-103-RM LS1608-1 |
5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L SOIC, EPAD Enabled
5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L SOIC, EPAD Enabled
Surface Mount Power Inductors 1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 1.5 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled 1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L SOIC, EPAD Enabled
|
ICE Components, Inc.
ICE COMPONENTS INC
|
| UF601G-AE3-R UF601L-AE3-R |
0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET
|
Unisonic Technologies
|
| ALD114904SA ALD114804A ALD114804APC ALD114804ASC A |
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY
|
ALD[Advanced Linear Devices]
|
| ALD114913SA ALD114813 ALD114813PC ALD114813SC ALD1 |
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS
|
ALD[Advanced Linear Devices]
|
| BF994SA BF994SB BF994S BF994 |
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
CAP CER 47PF 50V 5% C0G 0603
|
Vishay Telefunken
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| DN2535N3-G DN2535N5-G |
N-Channel Depletion-Mode Vertical DMOS FETs 0.5 A, 25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Supertex, Inc.
|
| BF964 BF964S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
Vishay Siliconix
|
|
