| PART |
Description |
Maker |
| HERAF808G HERAF80XG HERAF801G HERAF802G HERAF803G |
Isolation 8.0 AMPS. Glass Passivated High Efficient Rectifiers 隔离8.0安培。玻璃钝化高效整流二极管
From old datasheet system
Rectifier: High Efficient
|
Taiwan Semiconductor Co., Ltd.
TSC[Taiwan Semiconductor Company, Ltd]
|
| HFM306 HFM308 HFM301 HFM305 |
SMD, High Efficient Rectifier, 600V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 1000V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 50V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 400V, 3A, Silicon Diode
|
Rectron Semiconductor
|
| AS8650B-ZQFM-01 AS8650B-ZQFP-01 |
High-efficient Power Management Device with High-speed CAN Interface
|
austriamicrosystems AG
|
| MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
|
ON Semiconductor
|
| HT11G |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| HERF1008G HERF1003G HERF1006G HERF1007G |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| TBYV26C |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| HER104 HER101-UF4001 HER102-UF4002 HER103-UF4003 H |
1.0 AMP. HIGH EFFICIENT RECTIFIERS
|
Yangzhou yangjie electronic co., ltd
|
| HER151 |
1.5 AMPS. HIGH EFFICIENT RECTIFIERS
|
Yangzhou yangjie electronic co., ltd
|
| HER201 HER207 HER208 HER203 |
HIGH EFFICIENT RECTIFIER DIODES
|
SynSemi, Inc.
|
