| PART |
Description |
Maker |
| CLY2 |
High Power Packaged GaAs FET; 23.5 dBm
|
TriQuint Semiconductor
|
| TUF-R2SM |
High Reliability Mixer Level 7 (LO Power 7 dBm) 50 to 1000 MHz
|
Mini-Circuits
|
| TUF-R3LHSM |
High Reliability Mixer Level 10 (LO Power 10 dBm) 0.3 to 400 MHz
|
Mini-Circuits
|
| ADE-R6 |
High Reliability Mixer Level 7 (LO Power 7 dBm) 0.15 to 250 MHz
|
Mini-Circuits
|
| ADE-R1LH |
High Reliability Mixer Level 10 (LO Power 10 dBm) 1 to 500 MHz
|
Mini-Circuits
|
| TUF-R5MHSM |
High Reliability Mixer Level 13 (LO Power 13 dBm) 20 to 1500 MHz
|
Mini-Circuits
|
| ADE-R20 |
High Reliability Mixer Level 7 (LO Power 7 dBm) 1500 to 2800 MHz
|
Mini-Circuits
|
| ADE-R901 |
High Reliability Mixer Level 7 (LO Power 7 dBm) 300 to 1000 MHz
|
Mini-Circuits
|
| SE2522BL |
RangeCharger 2.4GHz 23 dBm Power Amplifier Preliminary Information
RangeCharger⑩ 2.4GHz 23 dBm Power Amplifier Preliminary Information
|
SiGe Semiconductor, Inc.
|
| ATF-511P8-BLK ATF-511P8-TR2 ATF-511P8-TR1 ATF-511P |
C BAND, Si, N-CHANNEL, RF POWER, HEMFET 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
High Linearity Enhancement Mode
ATF-511P8 · Single Voltage E-pHEMT Low Noise 41.7 dBm OIP3 in LPCC
|
Agilent Technologies, Inc.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| TM053-059-12-33 |
5.3 - 5.9 GHz 33 dBm Power Module
|
Transcom, Inc.
|
