| PART |
Description |
Maker |
| DG419 DG419AK DG419C_D DG419CJ DG419CY DG419DJ DG4 |
MARKER, 2 CARDS, 1-50; Material:Polyamide; Pack size:2; Width, external:5mm RoHS Compliant: Yes
SOLDER SHELLS FOR 15-POSITION FEMALE D-SUBMINIATURE CONNECTORS, PACKAGE OF 25
Improved / SPST/SPDT Analog Switches
Improved, SPST/SPDT Analog Switches
Improved SPST/SPDT Analog Switches
|
MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maxim Integrated Produc...
|
| AP2622GY-HF-14 |
Low Gate Charge
Low Gate Charge, Small Package Outline, Surface Mount Package
|
Advanced Power Electron...
|
| ESD200 ESD210 |
Output Interface UART, Compliant Bluetooth stack v1.2-improved
Output Interface UART, Compliant Bluetooth stack v1.2-improved AFH
|
DB Lectro Inc
|
| AP2346GN-HF AP2346GN-HF14 |
Capable of 1.8V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
|
| AP2344GN-HF AP2344GN-HF14 |
Capable of 1.8V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
|
| AP4434AGM-HF AP4434AGM-HF-14 |
Lower Gate Charge, Capable of 1.8V Gate Drive
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| AP9T19GJ |
Low Gate Charge, Capable of 2.5V gate drive
|
Advanced Power Electronics Corp.
|
| AP2324GN-HF |
Capable of 2.5V gate drive, Lower Gate Charge
|
Advanced Power Electronics Corp.
|
| STB70NF03L-1 STP70NF03L |
BOX MOUNTING RECEPTACLE N沟道30V 0.008ohm - 70A条TO-220/I2PAK低栅极电荷STripFET⑩功率MOSFET
Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:4VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:220uF; Capacitance
N-CHANNEL MOSFET
N-CHANNEL 30V - 0.008ohm - 70A TO-220/I2PAK LOW GATE CHARGE STripFET POWER MOSFET
N-CHANNEL 30V - 0.008ohm - 70A TO-220/I2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 30V - 0.008 OHM -70A TO-220/I2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| APT10025JLC |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
POWER MOS VI 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| STB40NF1007 STB40NF10T4 STB40NF10 |
N-channel 100V - 0.025Ω - 50A - D2PAK Low gate charge STripFET II Power MOSFET
N-channel 100V - 0.025ヘ - 50A - D2PAK Low gate charge STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
| STL6NM60N |
N-channel 600 V - 0.85 Ω - 5.75 A - PowerFLAT (5x5) ultra low gate charge MDmesh II Power MOSFET
N-channel 600 V - 0.85 ヘ - 5.75 A - PowerFLAT⑩ (5x5) ultra low gate charge MDmesh⑩ II Power MOSFET
|
STMicroelectronics
|
