| PART |
Description |
Maker |
| TH50VSF3582AASB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| TH50VSF4682AASB TH50VSF4683AASB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| MMDT3946 |
Multi-Chip Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| MMDT4401 |
Multi-Chip Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| CP617 |
Small Signal Transistor PNP - Silicon RF Transistor Chip
Chip Form: RF TRANSISTOR
|
Central Semiconductor Corp
|
| SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| CMLM0605 |
MULTI DISCRETE MODULESURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Central Semiconductor, Corp.
|
| TH50VSF3582AASB TH50VSF3583AASB |
TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| CMLM2205 |
MULTI DISCRETE MODULE SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE⑩ SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE??SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| BUX11 |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
|
Seme LAB
|
| BUR50 BUR5009 |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
|
Seme LAB
|
| BUP52 |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
|
Seme LAB
|
