| PART |
Description |
Maker |
| D10040240GT |
40 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
GaAs Power Doubler, 40 - 1000MHz, 24.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC
|
RF MICRO DEVICES INC
PREMIER DEVICES, INC.
|
| FSAV430MTCX FSAV430QSCX |
Low Voltage Ultra Low Power High Bandwidth (1.1GHz) Quad SPDT Video Switch
|
Fairchild Semiconductor
|
| EL2002ACN EL2002C EL2002CM EL2002CN |
Low Power 180 MHz Buffer Amplifier
Low Power, 180 MHz Buffer Amplifier
|
ELANTEC[Elantec Semiconductor]
|
| EL2002ACN EL2002C EL2002CM EL2002CN |
Low Power/ 180 MHz Buffer Amplifier
|
Elantec
|
| JSPHS-26 |
50Ohm 180Voltage Variable 18 to 26 MHz 18 MHz - 26 MHz, 180 deg - 180 deg RF/MICROWAVE PHASE SHIFTER
|
Mini-Circuits
|
| MB1503 |
LOW-POWER PLL FREQUENCY SYNTHESIZER WITH POWER SAVE FUNCTION (1.1GHz)
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| TIM7179-25UL |
HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| CFK0301 CFK0301-AK-000T |
500 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
High Dynamic Range Dual, Low-Noise GaAs FET
|
List of Unclassifed Manufacturers
etc
|
| ADSP21065L |
Low-cost Sharc / 60 Mhz / 180 Mflops / 3.3v / Floating Point
|
Analog Devices
|
| APT5018BFLL APT5018SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗，高电压，N沟道增强模式的新一代功率MOSFET
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
POWER MOS 7 500V 27A 0.180 Ohm
|
Advanced Power Technology, Ltd.
|
| BF2040 Q62702-F1775 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
