| PART |
Description |
Maker |
| AT25F2048-14 |
Byte Mode and 256-byte Page Mode for Program Operations
|
ATMEL Corporation
|
| ENA0970B |
CMOS IC 8K-byte FROM and 256-byte RAM integrated 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| LC87F0808A |
8K-byte FROM and 256-byte RAM integrated 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
| NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，4千兆位，8千兆112 Byte/1056字的页面.8V/3V，NAND闪存
|
STMicroelectronics N.V.
|
| LC322271J LC322271T-70 LC322271T-80 LC322271M |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Write
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
SANYO[Sanyo Semicon Device]
|
| A29DL324 A29DL324TG-90 A29DL324TV-90 A29DL324UG-90 |
32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
|
AMICC[AMIC Technology]
|
| SLE4442M2.2 SLE4442C SLE4442 SLE4432 SLE4432M2.2 S |
ICS FOR CHIP CARDS INTELLIGENT 256-BYTE EEPROM
From old datasheet system
(SLE4432 / SLE4442) 256 Byte EEPROM
Intelligent 256Bit EEPROM
SERIAL EEPROM,256X8,MOS,WAFER,PLASTIC
SERIAL EEPROM,256X8,MOS,MODULE,8PIN,PLASTIC
|
SIEMENS[Siemens Semiconductor Group]
Infineon Technologies AG
|
| UPD70F3116GJ-UEN UPD703116GJA1-XXX-UEN UPD703116GJ |
V850E/IA1 Flash products ROM: 256K-byte, RAM: 10K-byte
V850E/IA1 mask product ROM: 256 KB RAM: 10 KB
|
NEC
|
