| PART |
Description |
Maker |
| PC48F4400PWU00 PC48F4400PWUB0 RD38F5070MMT0B PF38F |
Numonyx Wireless Flash Memory (W18)
|
Numonyx B.V
http://
|
| 313295-04 PF38F5070M0Y0T0 |
Numonyx StrataFlash Wireless Memory
|
Numonyx B.V
|
| JS28F128P30TF75A JS28F640P30TF75A |
Numonyx Axcell P30-65nm Flash Memory
Numonyx? Axcell P30-65nm Flash Memory
|
Micron Technology
|
| PH28F128L18T85 PH28F256L18T85 PH28F640L18T85 JZ48F |
StrataFlash Wireless Memory 无线的StrataFlash存储
StrataFlash Wireless Memory 8M X 16 FLASH 1.8V PROM, 85 ns, PBGA56
|
Intel Corp.
Intel, Corp.
|
| GE28F640W18 |
Wireless Flash Memory
|
Intel Corporation
|
| PC48F4400P0VB00 RC28F640P30B85 JS28F640P30B85 RC28 |
Numonyx StrataFlash Embedded Memory
|
Numonyx B.V
|
| PC28F128P30 |
Numonyx StrataFlash Embedded Memory
|
Numonyx
|
| BAS16 BAS16/T1 BAS16W/T1 |
DIODE KLEINSIGNAL SMD 贴片二极管KLEINSIGNAL
CY7C603xx Wireless; Memory Size: 8K; RAM: 512B; Vcc (V): 2.4-3.6V; Core: M8C; Code Memory Architecture: Flash; Development Kit: CY3656 二极管采用SOT 323 SCHALT
High-speed diode
|
Won-Top Electronics Co., Ltd.
Philips Semiconductors
NXP Semiconductors
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| CAT28F020_04 CAT28F020 CAT28F020G-12T CAT28F020G-9 |
256K X 8 FLASH 12V PROM, 90 ns, PQCC32
2 Megabit CMOS Flash Memory
Bulk Erase Flash Memory, 2Mb
|
http://
CATALYST[Catalyst Semiconductor]
|
| W39V040FA W39V040FAT W39V040FAP W39V040FAQ |
3.3-Volt Flash
NVM > Flash> FWH/LPC Flash Memory
512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE
|
Winbond Electronics
WINBOND[Winbond]
|
| UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access
8K x 8 CMOS SRAM
|
United Microelectronics Corporation
ETC
UMC[UMC Corporation]
|
