PART |
Description |
Maker |
ISL29147 |
Low Power Ambient Light and Proximity Sensor with Enhanced Infrared Rejection
|
Intersil Corporation
|
ISL29147IROMZ-EVALZ ISL29147IROMZ-T7 |
Low Power Ambient Light and Proximity Sensor with Enhanced Infrared Rejection
|
Intersil Corporation
|
QEB421 QEB421TR |
SURFACE MOUNT INFRARED LIGHT EMITTING DIODE SURFACE MOUNT INFRARED 2.4 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor] Lite-On Technology, Corp.
|
QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
OP165D |
GaAs Plastic Infrared Emitting Diode(砷化镓塑料红外发光二极管,可替代K6500\OP163系列器件) 3 mm, 1 ELEMENT, INFRARED LED, 935 nm
|
Optek Technology
|
LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
TLN102 |
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
TLN201 |
INFRARED LED GAA AS INFRARED ENITTER
|
Toshiba Corporation Toshiba Semiconductor
|
TLN115A07 TLN115AF TLN115A |
Infrared LED GaAs Infrared Emitter
|
Toshiba Semiconductor
|
PIC18FXXXX PIC18LF8722-E_PT PIC18F6627 PIC18F6722 |
(PIC18Fxx2x) Enhanced Flash Microcontrollers 64/80-PIN 1-MBIT ENHANCED FLASH MICROCONTROLLERS WITH 10-BIT A/D AND NANOWATT TECHNOLOGY
|
MICROCHIP[Microchip Technology]
|