| PART |
Description |
Maker |
| 2SK30ATM |
Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
|
Toshiba Semiconductor
|
| 2SK30ATM |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
|
TOSHIBA
|
| BA3306 A5800528 |
Audio LSIs > Pre amplifier/Line amplifier > Pre amplifier
Dual preamplifier with ALC
From old datasheet system
|
ROHM[Rohm]
|
| LH2422AJ LH0022H-MIL LH0062H-MIL LH0023G-MIL LTC10 |
Operational Amplifier 运算放大
DC to DC Converter
Amplifier. Other
Amplifier.Other
|
STMicroelectronics N.V.
Ironwood Electronics
|
| ADR3410 |
50 ?High Linearity 1 Watt Amplifier
50 蟹 High Linearity 1 Watt Amplifier
50 з High Linearity 1 Watt Amplifier
The ADR3410 is a high performance, single-stage InGaP HBT amplifier designed for use in wireless infrastructure systems as a highly ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| 2SA1015L A1015 2SA1015 |
PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER)
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| LX5510B LX5510BLQ |
Wireless LAN Power Amplifier; Package: MLPQ16_3x3; 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
|
Microsemi, Corp.
Microsemi Corporation
|
| BGD902MI BGD902 |
CATV amplifier modules 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2SA1425 E000527 |
TRANSISTOR (POWER AMPLIFIER/ DRIVER STAGE AMPLIFIER APPLICATIONS)
From old datasheet system
TRANSISTOR (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS) 晶体管（功率放大器，放大器的驱动程序
|
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
