| PART |
Description |
Maker |
| M68AF511A M68AF511AL55MC1T M68AF511AL55MC6T M68AF5 |
4 Mbit (512K x8) / 5V Asynchronous SRAM
4 Mbit (512K x8), 5V Asynchronous SRAM(512K X 8 SRAM 5V SOP32 ,I-Temp)
4 Mbit (512K x8), 5V Asynchronous SRAM 4兆位（为512k × 8），5V的异步SRAM
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| A28F400BR-TB A28F400BR-B AB28F400BR-T80 AB28F400BR |
4-MBIT (256K X 16/ 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes
4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-Mbit (256K x 16, 512K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
|
Intel Corporation
Intel Corp.
|
| CY7C1354CV25-225AXI CY7C1354CV25-167AXI CY7C1356CV |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture 9兆位56 × 36/512K × 18）流水线的SRAM的总线延迟TM架构
9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture 9兆位56 × 36/512K × 18）流水线的SRAM的总线延迟，TM架构
|
Cypress Semiconductor Corp.
|
| CY14B104LA-ZS25XIT CY14B104NA-BA20XI CY14B104NA-BA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO44
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| HY29LV800 HY29LV800T-55 HY29LV800T-55I HY29LV800T- |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory 8兆位00万x 8/512K × 16）低压快闪记忆体
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| CY7C1440AV33 CY7C1442AV33 CY7C1446AV33 |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM(36-Mb (1M x 36/2M x 18/512K x 72)管道式同步SRAM)
|
Cypress Semiconductor Corp.
|
| CY7C1049CV33-15VXE |
4 Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 3.0 to 3.6 V; 512K X 8 STANDARD SRAM, 15 ns, PDSO36
|
Cypress Semiconductor, Corp.
|
| CY7C1460AV33 |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM)
|
Cypress Semiconductor Corp.
|
| CY7C1386F-167BGXC CY7C1386F-167BGXI CY7C1386F-200B |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
| CY62148DV30 CY62148DV30LL-55BVI CY62148DV30L-55ZSX |
4-Mbit (512K x 8) MoBL垄莽 Static RAM
4-Mbit (512K x 8) MoBL? Static RAM
|
Cypress Semiconductor
|
| CY7C1464AV33-167BGXI CY7C1464AV33-200BGXC CY7C1462 |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBLArchitecture 512K X 72 ZBT SRAM, 3.4 ns, PBGA209
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBLArchitecture 512K X 72 ZBT SRAM, 3.2 ns, PBGA209
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBLArchitecture 2M X 18 ZBT SRAM, 2.6 ns, PBGA165
2M X 18 ZBT SRAM, 3.2 ns, PQFP100
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1382DV25-250BZC CY7C1382DV25-200BZC CY7C1382DV |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
