PART |
Description |
Maker |
BLS6G2731S-130 |
LDMOS S-band radar power transistor
|
Philips Semiconductors
|
BLS7G2933S-150 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|
BLL6H1214LS-250 |
LDMOS L-band Radar Power Transistor
|
NXP
|
BLS6G3135-20 BLS6G3135S-20 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors
|
BLS6G2933S-130 |
LDMOS S-band radar power transistor
|
NXP Semiconductors
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors Quanzhou Jinmei Electro...
|
XAM1214-130 AM1214-130 |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell Renesas Electronics Corporation
|
AM82731-003 2769 |
RF & Microwave Transistors S-Band Radar Applications(用于S波段雷达脉冲驱动的RF和微波晶体管) From old datasheet system S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
AM1214-250 |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
|
STMicroelectronics ST Microelectronics SGS Thomson Microelectronics
|
AM82731-006 2884 |
From old datasheet system RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|