| PART |
Description |
Maker |
| PM39F020-70JCE PM39F020-55PCE PM39F020-55JCE PM39F |
1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory 1兆位/ 2 4兆位5伏，只有闪存的CMOS
|
PMC-Sierra, Inc.
|
| SST39SF040 |
(SST39SF010A / SST39SF020A / SST39SF040) 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
| DA28F016SV-075 DA28F016SV-070 E28F016SV-075 E28F01 |
WSR2 0.04 Ohms 1% Tolerance
16-MBIT (1 MBIT x 16/ 2 MBIT x 8) FlashFile MEMORY
16-MBIT (1 MBIT x 16 / 2 MBIT x 8) FlashFile MEMORY
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 80 ns, PDSO56
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 70 ns, PDSO56
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 75 ns, PDSO56
|
Intel Corp.
Intel Corporation
Intel, Corp.
|
| SST39LF010-45-4C-B3KE SST39LF010-45-4C-MM SST39LF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SST[Silicon Storage Technology, Inc]
|
| VS28F016SV MS28F016SV |
16-Mbit (1-Mbit x 16/ 2-Mbit x 8) FlashFileTM MEMORY
16-Mbit FlashFileTM MEMORY
16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY 16兆位兆位× 16兆位× 8FlashFileTM记忆
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
| SST39VF1601 SST39VF6401-70-4C-B1K SST39VF6402-70-4 |
16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
|
http://
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| SST39SF010A SST39SF010A-45-4C-NH SST39SF010A-45-4C |
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SST[Silicon Storage Technology Inc]
SST[Silicon Storage Technology, Inc]
|
| CY7C1387F-167BGC CY7C1387F-167BGI CY7C1387F-167BGX |
Replacement for Intersil part number 8100604EA. Buy from authorized manufacturer Rochester Electronics.
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 18兆位（为512k × 36 / 1兆位× 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor Corp.
|
| AT52SC1283J AT52SC1283J-70CI AT52SC1283J-85CI AT52 |
128-Mbit Flash 32-Mbit/64-Mbit
|
Toshiba Semiconductor
ATMEL Corporation
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| M27C1024-10XF7 M27C1024-12XF7 M27C1024-15XF7 M27C1 |
1-Mbit (64Kb x16) UV EPROM, 100ns
1-Mbit (64Kb x16) UV EPROM, 120ns
1-Mbit (64Kb x16) UV EPROM, 150ns
1-Mbit (64Kb x16) UV EPROM, 200ns
1-Mbit (64Kb x16) UV EPROM, 35ns
1-Mbit (64Kb x16) UV EPROM, 45ns
1-Mbit (64Kb x16) UV EPROM, 55ns
1-Mbit (64Kb x16) UV EPROM, 70ns
1-Mbit (64Kb x16) UV EPROM, 80ns
1-Mbit (64Kb x16) UV EPROM, 90ns
1-Mbit (64Kb x16) OTP EPROM, 120ns
1-Mbit (64Kb x16) OTP EPROM, 70ns
1-Mbit (64Kb x16) OTP EPROM, 90ns
1-Mbit (64Kb x16) OTP EPROM, 55ns
1-Mbit (64Kb x16) OTP EPROM, 45ns
1-Mbit (64Kb x16) OTP EPROM, 35ns
1-Mbit (64Kb x16) OTP EPROM, 150ns
1-Mbit (64Kb x16) OTP EPROM, 100ns
|
SGS Thomson Microelectronics
|
