| PART |
Description |
Maker |
| PDTA123E PDTA123EE PDTA123EEF PDTA123EK PDTA123EU |
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP resistor-equipped transistors; R1 = 2.2 k楼?, R2 = 2.2 k楼?
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
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NXP Semiconductors
|
| PDTA144E PDTA144EE PDTA144EU PDTA144EU115 PDTA144E |
PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 47 kOhm PNP配电阻型晶体管；R1=47千欧姆，R2=47千欧
PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ
PNP resistor-equipped transistors; R1 = 47 k惟, R2 = 47 k惟
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NXP Semiconductors N.V.
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| PDTA114YEF PDTA114YT PDTA114YM |
PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 47 kOhm PNP配电阻型晶体管；R1=10千欧姆，R2=47千欧
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
PNP resistor-equipped transistors; R1 = 10 k楼?, R2 = 47 k楼?
|
NXP Semiconductors N.V.
|
| PDTA114Y PDTA114YE PDTA114YEF PDTA114YK PDTA114YM |
PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 47 kOhm; Package: SOT323 (SC-70); Container: Tape reel smd
PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 47 kOhm; Package: SOT416 (SC-75); Container: Tape reel smd
PDTA114Y series; PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 47 kOhm
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NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PDTA113Z PDTA113ZT215 PDTA113ZK PDTA113ZS PDTA113Z |
PNP resistor-equipped transistors; R1 = 1 kW, R2 = 10 kW
PNP resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT323 (SC-70); Container: Tape reel smd 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PEMD6 PEMD6_2 |
From old datasheet system
NPN/PNP RESISTOR-EQUIPPED TRANSISTORS; R1 = 4.7 KOHM, R2 = OPEN
NPN/PNP resistor-equipped transistors; R1 = 4.7 kohm/ R2 = open
|
NXP Semiconductors
Philips Semiconductors
|
| PDTC114E PDTC114EE PDTC114EEF PDTC114EK PDTC114EM |
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm NPN配电阻型晶体R1=10千欧姆，R2=10千欧
NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ
NPN resistor-equipped transistor; R1 = 10 k楼?, R2 = 10 k楼?
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NXP Semiconductors N.V.
|
| PEMB14 PUMB14 |
PNP/PNP resistor-equipped transistors; R1 = 47 kW, R2 = open
|
NXP Semiconductors
|
| PEMB19 PUMB19 PEMB19-PUMB19-15 |
PNP/PNP resistor-equipped transistors; R1 = 22 kW, R2 = open
|
NXP Semiconductors
|
| PEMD13 PEMD13_1 |
NPN/PNP resistor-equipped transistors; R1 = 4.7 kohm/ R2 = 47 kohm
From old datasheet system
NPN/PNP RESISTOR-EQUIPPED TRANSISTORS; R1 = 4.7 KOHM, R2 = 47 KOHM
|
Philips Semiconductors
NXP Semiconductors
|
| PDTD113ZT PDTD113ZT215 PDTD113ZT-13 PDTD113ZT-15 |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
NPN 500 mA, 50 V resistor-equipped transistor R1 = 1 kW, R2 = 10 kW
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
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NXP Semiconductors N.V.
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