| PART |
Description |
Maker |
| CLE200F |
880nm IRED, Surface mount, wide beam
|
Clairex Technologies
|
| CLE310F |
850nm IRED, Surface mount, narrow beam
Super-efficient AlGaAs IRED Flat Lead PLCC Package
|
Clairex Technologies
ETC[ETC]
List of Unclassifed Manufacturers
|
| CLE536W |
High Power Blue LED Flat Window Can, Hermetically Sealed
|
ETC
|
| TLP181-GB TLP181_02 TLP181 TLP181GR TLP181GRL |
Photocoupler GaAs Ired & Photo .Transistor
GaAs Ired and Photo−Transistor
GaAs IRED & PHOTO-TRANSISTOR
Photo coupler (phototransitor output)
IC OPTOCOUPL AC/DC-IN 1-CH TRANS DC-OUT 4MFSOP
|
TOSHIBA[Toshiba Semiconductor]
|
| Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| MTD8600TT |
Peak Sensitivity Wavelength: 880nm
|
Marktech Corporate
|
| MTD8000N4T |
Peak Sensitivity Wavelength: 880nm
|
Marktech Corporate
|
| TLP35007 TLP350 |
GaA?As IRED Photo IC
GaAГAs IRED Photo IC
|
Toshiba Semiconductor
|
| TLP75107 TLP751 |
GaA?As Ired Photo IC
GaA??s Ired Photo IC
GaAГAs Ired Photo IC
|
Toshiba Semiconductor
|
| PS4012 |
PHOTOTRANSISTOR | NPN | 880NM PEAK WAVELENGTH | 30M | LED-2H 光电晶体管|叩| 880NM峰值波长| 3000万|发光二极管，下半
|
NEC, Corp.
|
