| PART |
Description |
Maker |
| JHV3480 JHV34 JHV3412 JHV3416 JHV3420 JHV3424 JHV3 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 46; IFSM (A): 800; Vrwm (V): 8000; IR (µA): 6000; 12 A, SILICON, RECTIFIER DIODE
HIGH VOLTAGE RECTIFIER ASSEMBLY
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6 |
High Voltage,High Current,High Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存???
5.5 A, 16000 V, SILICON, RECTIFIER DIODE
High Voltage,High Current,High Density Standard Recovery Rectifier(反向电压6000V，温5℃时平均整流电流5.5A,高压，大电流,高密度，标准恢复整流
STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER
|
Semtech Corporation
|
| R4000 R5000 R2500 R3000 |
HIGH VOLTAGE SILICON RECTIFIER (VOLTAGE RANGE 2500 to 5000 Volts CURRENT 0.2 Ampere)
HIGH VOLTAGE SILICON RECTIFIER (VOLTAGE RANGE 2500 to 5000 Volts CURRENT 0.2 Ampere) 0.2 A, 2500 V, SILICON, SIGNAL DIODE, DO-15
CB 17C 17#16 PIN RECP BOX
|
RECTRON[Rectron Semiconductor]
RECTRON LTD
|
| SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V，温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V，温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度，高电压，标准恢复倍流整流（反向电5000V，温25℃时平均整流电流0.4A，高密度，高电压，标准恢复倍增整流器）
|
Semtech Corporation
Semtech, Corp.
|
| MBR2080CT MBR20100CT MBR2090CT MBR2070CT |
20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER 20 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB
|
Diodes, Inc.
DIODES[Diodes Incorporated]
|
| STPS16150CT STPS16150CR STPS16150CG-TR STPS16150CG |
8 A, 150 V, SILICON, RECTIFIER DIODE
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 高压功率肖特基整流器
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MBRM3100-13 MBRM3100 |
3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITE3 3 A, 100 V, SILICON, RECTIFIER DIODE
|
Diodes, Inc.
Diodes Inc.
DIODES[Diodes Incorporated]
|
| STPS40150CG-TR STPS40150CW STPS40150CT |
20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
20 A, 150 V, SILICON, RECTIFIER DIODE, TO-247AC
|
ST Microelectronics
STMICROELECTRONICS
|
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
| JHV21HI2 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 22; Vrwm (V): 12000; IR (µA): 10; 22 A, SILICON, RECTIFIER DIODE
|
Microsemi, Corp.
|
| V20120SHM3-4W V20120S-M3-4W VI20120SHM3-4W VI20120 |
High-Voltage Trench MOS Barrier Schottky Rectifier
20 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| VTS40100CT TS40100CT |
20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
|
VISHAY SEMICONDUCTORS
Vishay Siliconix
|
