| PART |
Description |
Maker |
| MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| PTF10009 |
85 Watts, 1.0 GHz GOLDMOS?/a> Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOSField Effect Transistor
85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3314 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV)
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM3K14T |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) DC-DC Converter High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3471 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
|
Toshiba Semiconductor
|
| TPCS8201 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK2613 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII)
|
TOSHIBA[Toshiba Semiconductor]
|
| MTD3055VL MTD3055VLNL |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
From old datasheet system
M-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| PTF10137 |
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦，1.0 GHz的GOLDMOS场效应晶体管
12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
