| PART |
Description |
Maker |
| LT5503 |
1.2GHz to 2.7GHz Direct IQ Modulator and Mixer, 1.8V to 5.25V Supply
|
Linear
|
| LT5503EFEPBF |
1.2GHz to 2.7GHz Direct IQ Modulator and Mixer; Package: TSSOP; No of Pins: 20; Temperature Range: -40°C to 125°C 1200 MHz - 2700 MHz RF/MICROWAVE I/Q MODULATOR
|
Linear Technology, Corp.
|
| HSMS-B2825 HSMS-B2825-TR2G HSMS-2820-BLKG HSMS-282 |
HSMS-282P · RF mixer/detector diode
HSMS-282K · RF mixer/detector diode
Surface Mount RF Schottky Barrier Diodes
HSMS-282F · RF mixer/detector diode
HSMS-2829 · RF mixer/detector diode
HSMS-282R · RF mixer/detector diode
HSMS-2825 · RF mixer/detector diode
HSMS-2823 · RF mixer/detector diode
HSMS-2822 · RF mixer/detector diode
HSMS-2824 · RF mixer/detector diode
HSMS-2820 · RF mixer/detector diode
HSMS-282L · RF mixer/detector diode
|
Agilent(Hewlett-Packard...
http://
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| SP5070FMP SP5070 SP5070DP SP5070MP |
0.5-7.0V; 18mA; 2GHz fixed modulus frquency sythesiser for satellite TV, high IF cable tuning systems, C-Band with frequency doubling mixer
2.4GHz Fixed Modulus Frequency Synthesiser(2.4GHz固定模数频率合成
2.GHz Fixed Modulus Frequency Synthesiser
|
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| PMB2331 |
The mixer used in this design is a general purpose up-/downconversion gilbert cell mixer
|
SIEMENS AG
|
| TPD08-0.5G02S |
0.5-2GHz 8-Way Power Divider
|
Transcom, Inc.
|
| MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| RFPA2226SQ RFPA2226-EVB1 RFPA2226-EVB2 |
2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
|
RF Micro Devices
|
| MAX2754 MAX2754EUA |
1.2GHz VCO with Linear Modulation Input
|
Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
|
| SP5060 |
2Ghz Fixed Modulus Frequency Synthesiser
|
GEC Plessey Semiconductors
|
| SPA-1526Z SPA-1526Z-EVB1 SPA-1526Z-EVB2 SPA-1526Z- |
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER
|
RF Micro Devices
http://
|
| MGFC39V6472A |
6.4-7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
