| PART |
Description |
Maker |
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| OD-880E |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| OD-880W |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode
|
| OD-880W |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| OD-850-003 |
High-Power GaAlAs IR Emitters
|
OptoDiode Corp
|
| PDI-E825 |
GaAlAs High Power IR LED Emitters
|
Advanced Photonix, Inc.
|
| PDI-E838 |
GaAlAs High power IR LED Emitters
|
Advanced Photonix, Inc.
|
| PDI-E835 |
GaAlAs High power IR LED Emitters (660nm/940nm)
|
Advanced Photonix, Inc.
|
| MIE-544L3 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSAL6200 TSAL620009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
http://
Vishay Siliconix
|
