| PART |
Description |
Maker |
| PVI5033RS-TPBF |
Monolithic construction
|
International Rectifier
|
| MJE702 MJE700 MJE701 MJE703 |
Monolithic Construction With Built-in Base- Emitter Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP117 TIP115 TIP116 |
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| MJD117L MJD117 |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC(Korea)
KEC[KEC(Korea Electronics)]
|
| TIP111 TIP110 TIP112 TIP112TU |
NPN Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP101 TIP100 TIP102 |
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
| IHTH-0750JZ-5A |
Shielded construction
|
Vishay Siliconix
|
| CDPH28D11FNP-6R8MC CDPH28D11FNP-1R2NC CDPH28D11FNP |
Ferrite core construction.
|
Sumida Corporation
|
| MMBZ5250B |
Planar Die Construction
|
TY Semiconductor Co., Ltd
|
| D1B121000 |
Dip type construction
|
COSMO Electronics
|
