| PART |
Description |
Maker |
| PHP160NQ08T PHB160NQ08T |
CAP 0.1UF 100V 10% X7R AXIAL TR-14 75 A, 75 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel TrenchMOS standard level FET
N-channel Trenchmos (tm) standard level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BUK7524-55A BUK7624-55A BUK7624-55A118 |
TrenchMOS(tm) standard level FET
TrenchMOS TM standard level FET
TrenchMOS standard level FET 47 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PHP191NQ06LT PHB191NQ06LT |
Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology
PHP/PHB191NQ06LT; N-channel Trenchmos (tm) logic level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BUK9775-55 BUK9775-56 |
TrenchMOSTM）transistor Logic level FET(TrenchMOSTM）晶体管逻辑电平FET) TrenchMOS（商标）场效应晶体管逻辑电平TrenchMOS（商标）晶体管逻辑电平场效应管
TrenchMOS transistor Logic level FET 11.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHB50N03T PHB50N03 |
N-channel TrenchMOS transistor Logic level FET
TrenchMOS transistor Standard level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PHP21N06LT PHD21N06LT PHP21N06 PHB21N06LT PHB_PHD_ |
N-channel TrenchMOS(tm) transistor Logic level FET
From old datasheet system
N-channel TrenchMOS transistor Logic level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PSMN9R1-30YL |
N-channel 9.1 m30 V TrenchMOS logic level FET in LFPAK
N-channel 9.1 m? 30 V TrenchMOS logic level FET in LFPAK
N-channel 9.1 m 30 V TrenchMOS logic level FET in LFPAK
|
NXP Semiconductors N.V.
|
| PHU78NQ03LT PHP78NQ03LT |
N-channel TrenchMOS logic level FET
N-channel TrenchMOSTM logic level FET 75 A, 25 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
| BUK6E4R0-75C |
N-channel TrenchMOS FET
|
NXP Semiconductors N.V.
|
| 2N7002KA |
N-channel TrenchMOS FET
|
NXP Semiconductors
|
