PART |
Description |
Maker |
SSM5G02TU-14 |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
1SS367 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
SSM6G18NU |
Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
1SS367 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
Shenzhen Ping Sheng Electronics Co., Ltd.
|
1SS315 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
SSM5H07TU |
Silicon Epitaxial Schottky Barrier Diode DC-DC Converter
|
Toshiba Semiconductor
|
SDB704CA |
Silicon Epitaxial Planar Schottky Barrier Diode
|
SEMTECH ELECTRONICS LTD.
|
SCS520DS |
0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
HN20S01F |
Silicon Epitaxial Schottky Barrier Type Diode
|
Toshiba
|
RB500V-40 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|