PART |
Description |
Maker |
MC1471 MC1471C MC1741CDR2 MC1741CP1 MC1741CD MC174 |
Internally Compensated, High Performance Operational Amplifier From old datasheet system Internally Compensated / High Performance Operational Amplifier Internally Compensated, High Performance Operational Amplifier OP-AMP, 1 MHz BAND WIDTH, PDIP8
|
ONSEMI[ON Semiconductor]
|
BTA16-600BW3G BTA16-800BW3G BTA16-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA I-GT, 16 A I-T(RMS) Triacs Silicon Bidirectional Thyristors 600V 16 A, 50mA Igt 3 Quadrant Internally Isolated Triac
|
ON Semiconductor
|
MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL 14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET 14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MC1436CD MC1436CP1 MC1436D MC1436P1 MC1436_D ON088 |
High Voltage / Internally Compensated Operational Amplifiers From old datasheet system High Voltage Internally Compensated Operational Amplifiers High Voltage, Internally Compensated Operational Amplifiers
|
MOTOROLA[Motorola Inc] ON Semi Motorola, Inc
|
MGFK37V4045 K374045 |
14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET From old datasheet system 14.0~14.5GHZ BAND 5W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC38V5694 C385964 MGFC38V5964 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~ 6.4GHZ BAND 6W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V4450A C424450A |
From old datasheet system 4.4~5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET 4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MLD2N06CL ON2069 MLD2N06CL-D |
VOLTAGE CLAMPED CURRENT LIMITING MOSFET From old datasheet system Internally Clamped, Current Limited N hannel Logic Level Power MOSFET SMARTDISCRETES Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET
|
Motorola, Inc. ON Semiconductor
|
MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
MGFS45V2527 |
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.5 - 2.7GHz频带功率30W国内MATCHD砷化镓场效应 2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
STGB7NB40LZ |
N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESH⑩ IGBT N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
EIC6472-5 |
Internally Matched Power FET
|
Excelics Semiconductor
|