| PART |
Description |
Maker |
| 1N1199ASERIES 1N3670ASERIES 1N1203A 1N1202A 1N3673 |
50V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
12 AMP MEDIUM POWER SILICON RECTIFIER DIODES
13 AM MEDIUM POWER SILICON RECTIFIER DIODES
12 AM MEDIUM POWER SILICON RECTIFIER DIODES
400V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
|
IRF[International Rectifier]
|
| 1N1204A 1N1202A 1N1203A 1N1199A 1N1199A12 |
Medium Power Silicon Rectifier Diodes, 12 A
|
Vishay Siliconix
|
| 30S |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES 3安培中功率一般整流二极管
|
Microsemi, Corp.
|
| RM60DZ-24 RM60DZ-2H RM60CZ-24 RM60CZ-2H |
60 A, 1200 V, SILICON, RECTIFIER DIODE
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE 高压中功率常规使用绝缘型
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric, Corp.
|
| TRA3225 TRA3225-D TRA3225/D |
Medium-Current Silicon Rectifier 中等电流硅整
Medium - Current Silicon Rectifier
|
ONSEMI[ON Semiconductor]
|
| 1N3664 1N3494 1N3493 1N3663 1N3491 1N3492 1N3495 S |
Silicon Power Rectifier
Standard Rectifier (trr more than 500ns)
Silicon Power Rectifier 35 A, 400 V, SILICON, RECTIFIER DIODE, DO-208AA
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| 2CL2G 2CL2F |
HIGH VOLTAGE, MEDIUM CURRENT SILICON RECTIFIER DIODES
|
New Jersey Semi-Conduct...
|
| BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
330MHz Buffered Video Switches Crosspoint Building Blocks
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps
500MHz, Low-Power Op Amps
BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
400MHz, Ultra-Low-Distortion Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| IR30CDR..LSERIES IR30CDR04LPBF IR30CDR10L IR30CDR0 |
1000 V, SILICON, RECTIFIER DIODE
400 V, SILICON, RECTIFIER DIODE
HIGH POWER RECTIFIER DIODES
800 V, SILICON, RECTIFIER DIODE
|
VISHAY SEMICONDUCTORS
International Rectifier
|
| IR180DR-G06PBF IR150DR-G08PBF IR150DR-G04PBF IR180 |
25 A, 600 V, SILICON, RECTIFIER DIODE
16 A, 800 V, SILICON, RECTIFIER DIODE
16 A, 400 V, SILICON, RECTIFIER DIODE
25 A, 200 V, SILICON, RECTIFIER DIODE
25 A, 1000 V, SILICON, RECTIFIER DIODE
16 A, 1200 V, SILICON, RECTIFIER DIODE
16 A, 100 V, SILICON, RECTIFIER DIODE
|
TT electronics Semelab, Ltd.
|
| VSKT320 VSKD250-04 VSKD250-08 VSKD250-12 VSKD250-1 |
Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules)
320 A, 1200 V, SILICON, RECTIFIER DIODE
250 A, 1600 V, SILICON, RECTIFIER DIODE
320 A, 800 V, SILICON, RECTIFIER DIODE
320 A, 400 V, SILICON, RECTIFIER DIODE
320 A, 1600 V, SILICON, RECTIFIER DIODE
250 A, 1200 V, SILICON, RECTIFIER DIODE
250 A, 800 V, SILICON, RECTIFIER DIODE
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
|
