| PART |
Description |
Maker |
| RUP15050-10-14 |
GaN-SiC Broadband Amplifier
|
RFHIC
|
| TGF2952 TGF2952-15 |
7 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-10 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-05 |
25 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| MAGX-000912-500L00 MAGX-000912-SB3PPR |
GaN on SiC Depletion-Mode Transistor Technology
|
M/A-COM Technology Solutions, Inc.
|
| RTP21080-20 |
GaN Power Amp Pallet
|
RFHIC
|
| TGF2023-20 |
100 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| MAGX-001214-500L00 MAGX-001214-500L0S MAGX-001214- |
GaN on SiC Depletion-Mode Transistor Technology Internally Matched
|
M/A-COM Technology Solutions, Inc.
|
| BLS6G2933P-200 |
LDMOS S-Band radar pallet amplifier
|
Philips Semiconductors
|
| MAGX-000912-250L00 MAGX-000912-SB1PPR |
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-000912-125L00 MAGX-000912-SB0PPR |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
