PART |
Description |
Maker |
ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX 0.5?12 GHz Low Noise Gallium Arsenide FET 0.5-12 GHz Low Noise Gallium Arsenide FET 0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
DC1282G DC1282H |
12 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
|
|
DGB9335 DGB9344 DGB9345 DGB8544 DGB8514 DGB8164 DG |
12.4 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE 18 GHz - 26.5 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE 5 GHz - 8.2 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE 40 GHz - 60 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE 8.2 GHz - 12.4 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
|
SKYWORKS SOLUTIONS INC
|
ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TR |
0.5-12 GHz General Purpose Gallium Arsenide FET 0.5?12 GHz General Purpose Gallium Arsenide FET 0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
|
ATF-21186 ATF-21186-STR ATF-21186-TR1 |
0.5-6 GHz General Purpose Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
NPT1015 NPT1015-15 |
Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution... M/A-COM Technology Solu...
|
ATF-44101 |
2-8 GHz Medium Power Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
NPT2022 NPT2022-15 |
Gallium Nitride 48V, 100W, DC-2 GHz HEMT
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
EBOX565-500-FL-DC-6300U EBOX565-500-FL-DC-6100U |
Intel? Core?i5-6300U 2.4 GHz/i3-6100U 2.3 GHz/CeleronR 3955U 2.0 GHz (Skylake ULT SoC)
|
Axiomtek Co., Ltd.
|
MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... 2.4-2.5 GHz Power Amplifier From old datasheet system 2.4?2.5 GHz Power Amplifier Single-band power amplifiers 2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc] ANADIGICS Inc ANADIGICS, Inc.
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