| PART |
Description |
Maker |
| EM68B16CWPA EM68B16CWPA-25H EM68B16CWPA-3H |
32M x 16 bit DDRII Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| MC-4532CC726EF-A80 MC-4532CC726EF-A10 MC-4532CC726 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
ELPIDA MEMORY INC
|
| EM68916CWQA EM68916CWQA-25H EM68916CWQA-37H EM6891 |
8M x 16 bit DDRII Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| EM63B165TS-5SG EM63B165TS-6SG EM63B165TS-7SG |
32M x 16 bit Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| EM6AB160TSA-5G EM6AB160TSA |
32M x 16 bit DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| K4M51163PC-RBC K4M51163PC-RBF1L K4M51163PC-RBF90 K |
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
TriQuint Semiconductor, Inc.
Jameco Electronics
Anpec Electronics, Corp.
SAMSUNG[Samsung semiconductor]
|
| HYS64V16300GU HYS72V16300GU HYS64V32220GU HYS72V32 |
3.3 V 16M × 64-Bit 1 Bank SDRAM Module(3.3 V 16M × 64-1同步动态RAM模块)
3.3 V 16M × 72-Bit 1 Bank SDRAM Module(3.3 V 16M × 72-1同步动态RAM模块)
3.3 V 32M × 64-Bit 1 Bank SDRAM Module(3.3 V 32M × 64-1同步动态RAM模块)
3.3 V 32M × 72-Bit 1 Bank SDRAM Module(3.3 V 32M × 72-1同步动态RAM模块)
32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
| HM64YGB36100BP-33 HM64YGB36100 |
32M Synchronous Late Write Fast Static RAM (1-Mword 】 36-bit)
|
Renesas Electronics Corporation
|
| UPD44323362 UPD44323362F1-C40-FJ1 |
32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 1M-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
|
NEC Corp.
|
| AS4C64M16D2-25BIN AS4C64M16D2-25BCN |
1Gb (64M x 16 bit) DDRII Synchronous DRAM (SDRAM)
JEDEC Standard Compliant
|
Alliance Semiconductor ...
|
| K4S280432B-TC_L75 K4S280432B-TC_L80 K4S280432B K4S |
32M X 4 SYNCHRONOUS DRAM, 7 ns, PDSO54
128MBIT SDRAM 8M X 4BIT X 4 BANKS SYNCHRONOUS DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
