| PART |
Description |
Maker |
| BSP372 Q67000-S300 BSP372E-6327 BSP372E6327 |
1.7 A, 100 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated SIPMOS小信号晶体管（N通道增强模式逻辑层次额定雪崩
1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| PSMN9R5-100PS |
N-channel 100 V 9.6 m standard level MOSFET in T0220 89 A, 100 V, 0.0096 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
| MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| PSMN039-100YS |
N-channel LFPAK 100 V 39.5 m惟 standard level MOSFET
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
N-channel LFPAK 100 V 39.5 m standard level MOSFET 28.1 A, 100 V, 0.0395 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
|
NXP Semiconductors N.V.
|
| SI4482DY SI4482DY-T1 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
N-Channel 100-V (D-S) MOSFET
N-Channel, 100-V Single
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| SUP90N10-09 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
|
VISAY[Vishay Siliconix]
|
| ADG604 ADG604YRU ADG604YRUZ-REEL7 ADG604YRU-REEL A |
1 pC Charge Injection, 100 pA Leakage CMOS ±5 V/5 V/3 V 4-Channel Multiplexer
1 pC Charge Injection, 100 pA Leakage CMOS 卤5 V/5 V/3 V 4-Channel Multiplexer
IC,ANALOG MUX,QUAD,1-CHANNEL,CMOS,TSSOP,14PIN,PLASTIC
1 PC CHARGE INJECTION, 100 PA LEAKAGE CMOS 5 V/5 V/3 V 4-CHANNEL MULTIPLEXER
1pC Charge Injection, Low Leakage CMOS 4-Channel Multiplexer
|
Analog Devices, Inc.
adi
|
| FQD19N10 FQD17P06TF |
N-Channel QFET? MOSFET 100 V, 15.6 A, 100 mΩ
|
Fairchild Semiconductor
|
| UPA602T PA602T G11249EJ1V0DS00 UPA602T-A |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FET 6-PIN 2 CIRCUITS
MOS Field Effect Transistor
From old datasheet system
|
NEC Corp.
|
| IRFN9140SMD IRFN9140SMDR4 |
P-CHANNEL POWER MOSFET
14 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, SMD1, 3 PIN
ER 06 20 P/C 14 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET
|
International Rectifier
SEME-LAB[Seme LAB]
TT electronics Semelab, Ltd.
SEMELAB LTD
|
|
