| PART |
Description |
Maker |
| GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 |
E2PROM CMOS PROGRAMMABLE LOGIC DEVICE E2PROM的可编程逻辑器件的CMOS
EMI/RFI FILTER
IGBT MODULE, TRENCH, 600V, 6 PACK; Transistor type:3-Phase Bridge Inverter; Voltage, Vces:600V; Current, Ic continuous a max:174A; Voltage, Vce sat max:1.9V; Case style:SEMITOP 4; Current, Icm pulsed:400A; Temperature, Tj RoHS Compliant: Yes
IGBT MODULE, 6 PACK 600VIGBT MODULE, 6 PACK 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2.2V; Current, Ic continuous a max:24A; Current, Icm pulsed:22A; Power, Pd:1700W; Time, rise:30ns;
EPROM CMOS Programmable Logic Device
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| PTMB100E6 PTMB100E6C |
IGBT Module-Six Pack
|
Nihon Inter Electronics Corporation
http://
|
| PTMB75A6C |
IGBT Module-Six Pack
|
Nihon Inter Electronics Corporation
|
| PTMB75E6 PTMB75E6C |
IGBT Module-Six Pack
|
Nihon Inter Electronics Corporation
|
| PTMB150A6 |
IGBT MODULE Six-Pack 150A 600V
|
http://
NIEC[Nihon Inter Electronics Corporation]
|
| BSM25GD100 BSM25GD100D C67076-A2501-A2 |
IGBT MODULE 25 A, 1000 V, N-CHANNEL IGBT
IGBT MODULE IGBT模块
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| 7MBP10PE120 7MBR10PE120 |
IGBT module (S series)
IGBT Module(Power Integrated Module)
|
FUJI[Fuji Electric]
|
| BSM75GD120DN2 075D12N2 C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| GB100XCP12-227 |
IGBT/SiC Diode Co-pack
|
GeneSiC Semiconductor, ...
|
| IXGH32N60AU1S IXGH32N60AU1 |
HiPerFAST IGBT with Diode(VCES涓?00V锛?CE(sat)涓?.9V??iPerFAST缁????????浣??(甯?????锛?
HiPerFAST IGBT with Diode Combi Pack
|
IXYS[IXYS Corporation]
|
