| PART |
Description |
Maker |
| HY5DS573222F-28 HY5DS573222FP-28 HY5DS573222FP-36 |
GDDR SDRAM - 256Mb
256M(8Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| HY5DU283222F HY5DU283222F-26 HY5DU283222F-33 HY5DU |
GDDR SDRAM - 128Mb
128M(4MX32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| K4D26323QG K4D26323QG-GC33 K4D26323QG-GC25 K4D2632 |
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| W9412G2CB |
1M 】 4 BANKS 】 32 BITS GDDR SDRAM
|
Winbond
|
| HY5DU561622ETP HY5DU561622ETP-28 HY5DU561622ETP-33 |
256M(16Mx16) gDDR SDRAM
|
Hynix Semiconductor
|
| HY5DU283222AQP HY5DU283222AQP-33 HY5DU283222AQP-36 |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| W9412G2CB |
1M X 4 BANKS X 32 BITS GDDR SDRAM
|
Winbond
|
| HY5DS573222F-36 HY5DS573222F-28 HY5DS573222FP-4 HY |
256M(8Mx32) GDDR SDRAM 8M X 32 DDR DRAM, 0.6 ns, PBGA144
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HY5DS113222FM HY5DS113222FM-4 HY5DS113222FMP-4 HY5 |
512M(16Mx32) GDDR SDRAM 16M X 32 DDR DRAM, 0.6 ns, PBGA144
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond
WINBOND ELECTRONICS CORP
|
| HYS64V4200GDL-7.5 HYS64V8220GDL HYS64V4200GDL-8-X |
x64 SDRAM Module
3.3 V SDRAM Modules(3.3 V 同步动态RAM模块)
3.3 V SDRAM Module(3.3 V SDRAM 模块)
4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
